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TSIxxB1
TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
Application Specific Discretes A.S.D.TM
MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge : Telephone set Base station for cordless set Fax machine Modem Caller Id equipment Set top box DESCRIPTION The TSIxxB1 provides the diode bridge and the crowbar protection function that can be found in most of telecom terminal equipment. Integrated monolithically within a SO8 package, this ASDTM device allows space saving on the board and greater reliability. FEATURES STAND-OFF VOLTAGE FROM 62V TO 265V PEAK PULSE CURRENT : 30 A (10/1000 s) MAXIMUM DC CURRENT : IF = 0.2 A HOLDING CURRENT :150 mA IN ACCORDANCE WITH THE FOLLOWING STANDARDS :
CCITT K17 - K20 VDE 0433 CNET Bellcore TR-NWT-000974: 10/700 5/310 10/700 5/310 0.5/700 0.2/310 s s s s s s 1.5 kV 38A 2 kV 40A(*) 1.5 kV 38A 1 kV 30A(*) 2.5 kV 75A (*)
SO8
SCHEMATIC DIAGRAM
1 2 3 4
BENEFITS
8 7 6 5
10/1000 s 10/1000 s FCC Part 68 2/10 s 2/10 s MIL STD883C Method 3015-6 (*) with series resistor or PTC.
Diode bridge for polarity guard and crowbar protection within one device. Single chip for greater reliability Reduces component count versus discrete solution Saves space on the board
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
January 1998 - Ed: 3
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TSIxxB1
TYPICAL APPLICATION
PTC
Telecom terminals have a diode bridge for polarity guard, located at the line interface stage. They also have above this diode bridge one crowbar protection device that is mandatory to prevent atmospheric effects and AC mains disturbances from damaging the electronic circuitry that follows the diode bridge. SGS-THOMSON proposes a one chip device that includes both protection and diode bridge. This is the concept of the TSIxxB1 devices.
Fig. 1 : The various uses of the TSIxxB1 in a conventional telecom network
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TSIxxB1
ELECTRICAL PARAMETERS The VRM value corresponds to the maximum voltage of the application in normal operation. For instance, if the maximum line voltage is ranging between 100VRMS of ringing plus 48V of battery voltage, then the protection chosen for this application shall have a VRM close to 200V. The VBO is the triggering voltage. This indicates the voltage limit for which the component short-circuits. Passing this VBO makes the device turn on. The IBO is the current that makes the device turn on. Indeed, if we want a Trisil to be turned on not only the voltage across it shall pass the VBO value but the current through it shall also pass the IBO value. In other words, if a voltage surge occurring on the line is higher than the VBO value of a Trisil, whereas the line surge current is limited to a value that does not exceed the Trisil's IBO value, then the Trisil will never turn into short circuit. At this time the surge will be clamped by the Trisil. Anyhow the electronic circuitry located after the Trisil will always be protected whatever the Trisil state is (crowbar or clamping mode). The IH stands for the holding current. When the Trisil is turned on, as soon as the crossing current surge gets lower than this IH value, the Trisil protection device turns back in its idle state. Remark : for this reason the Trisil 's IH value shall be chosen higher than what the maximum telecom line current can be. TSIxxB1 BEHAVIOUR WITH REGARD TO SURGE STANDARD : The TSIxxB1 is able to replace both diode bridge and usual discrete protection on telecom terminals. Furthermore it complies with the CCITT K17 recommendations : 10/700 s waveform surge test, 1.5kV AC power induction test AC power contact test
Fig. 2 : Test circuit for the CCITT K17 recommendations
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TSIxxB1
TEST # 1 LIGHTNING SIMULATION This test concerns the 10/700 s waveform surge, 1.5 kV. Fig. 2 : 10/700 s waveform surge generator circuit The surge generator used for the test has the following circuitry (fig.2).
The behaviour of the TSI200B1 to this lightning surge is given below (fig. 3). Fig. 3 : Voltage across the TSI200B1 at the + and - terminations and current throught it for a 1.5 kV positive surge (fig.3a) and negative surge (fig. 3b)
These curves show the peak voltage the surge generates across the TSI200B1 + and terminations. This lasts a short time ( 2 s) and after, as the internal protection gehaves like a short circuit. The voltage drop across the TSIxxB1 becomes a few volts. In the meanwhile all the surge current flows in the protection. As far as the 10/700 s waveform surge test is concerned,the TSIxxB1 withstand the 1.5 kV test.
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TEST # 2 AC POWER INDUCTION TEST This test simulates the induction phenomena that can happen between telecom lines and AC mains lines (fig. 4). TEST #3 AC POWER CONTACT TEST This test simulates the direct contact between the telecom lines and the AC mains lines. The AC power contact test consists in applying 240VRMS through a 10 PTC during 15 minutes long on the device under test. The CCITT K17 recommendation specifies an internal generator impedance allowing 10 ARMS when in short circuit. The behavior of the TSI200B1 with respect to this surge is given in figure 6. Fig. 6 : Voltage at the TSI200B1 + & - terminations and the current through it.
Fig. 4 : AC power induction test circuit
Part #1 test conditions : VRMS = 240 V R = 600 t = 0.2 s VRMS = 600 V R = 600 t = 0.2 s
Part #2 test conditions :
Fig. 5 : Voltage at the + and - terminations of the TSI200B1, and current through it while test part 1 is applied.
The figure 6 shows that after 250ms there is no current anymore flowing through the TSI200B1 device. This is due to the action of the serial PTC that limits the current through the line. This PTC is mandatory for this test. It can also be replaced by a fuse or any other serial protection that "opens" the line loop under AC contact test.
The TSIxxB1 withstand the AC power induction test in both cases.
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP Parameter Non repetitive peak on-sate current (see note 1) 10/1000 s (open circuit voltage wave shape 10/100 s) 5/310 s (open circuit voltage wave shape 10/700 s) 2/10 s (open circuit voltage wave shape 2/10 s) Maximum DC current Non repetitive surge peak on-state current Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s
tp=1000s tp=310s tp=10s
Value 30 40 75 0.2 tp = 20 ms t = 1s 5 3.5 - 55 to +150 150 260
Unit A
IF ITSM Tstg Tj TL
A A C C
Note 1 : Pulse waveform : 10/1000s tr=10s 5/310s tr=5s 2/10s tr=2s
% I PP 100
50
0 tr tp
t
THERMAL RESISTANCE Symbol Rth(j-a) Junction to ambient Parameter Value 170 Unit C/W
ELECTRICAL CHARACTERISTICS (Tamb=25C) Symbol VRM VBO VBR IH IBO IRM IPP C T Parameter Stand-off voltage Breakover voltage Breakdown voltage Holding current Breakover current Leakage current at VRM Peak pulse current Capacitance Temperature coefficient
IBO IH IRM VRM
I
IPP
V
V BO
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ELECTRICAL CHARACTERISTICS (Tamb = 25 C) 1 - PROTECTION DEVICES PARAMETERS IRM @ VRM Type A max. TSI62B1 TSI180B1 TSI200B1 TSI220B1 TSI265B1 1 5 1 5 1 5 1 5 1 5 50 62 50 180 50 200 50 220 50 265 V VBO @ IBO note1 V max. 90 250 290 330 380 IH note2 mA min. 150 150 150 150 150 mA min. 50 50 50 50 50 IBO note1 mA max. 400 400 400 400 400 C note3 pF typ. 200 200 200 200 200
Note 1 : Measured at 50 Hz, one cycle Note 2 : See test cricuit Note 3 : VR = 0V, F = 1MHz, between pins 1 and 8.
2 - DIODE BRIDGE PARAMETERS Symbol VF (for one diode) IF = 20 mA IF = 100 mA Test condition Value 0.9 1.1 Unit V V
FUNCTIONAL HOLDING CURRENT (I H) TEST CIRCUIT : GO - NO GO TEST
R D.U.T. V BAT = - 48 V Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within a duration of 50 ms max.
- VP
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TSIxxB1
MARKING Type TSI62B1 TSI180B1 TSI200B1 TSI220B1 TSI265B1 Marking TSI62 TSI180 TSI200 TSI220 TSI265
ORDER CODE
TSI 265
Terminal Set Interface
B
1 RL
RL = tape& reel (2500 pcs). = tube (100 pcs).
SO8 Package VBR min.
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PACKAGE MECHANICAL DATA SO8 REF. DIMENSIONS Millimetres Min. A a1 a2 b b1 C c1 D E e e3 F Packaging : product supplied in tape and reel or antistatic tubes. 3.8 4.8 5.8 1.27 3.81 4.0 0.15 0.35 0.19 0.50 45 (typ) 5.0 6.2 0.189 0.228 0.050 0.150 0.157 0.197 0.244 0.1 Typ. Inches Max. Min. 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.020 Typ. Max. 0.069 0.010 0.065 0.019 0.010
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
(c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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